Experimental Investigation Of Bipolar Junction Transistor Amplifier - Essay On Design.

• To meaningfully interpret the DC-IV characteristics of the Bipolar Junction
• To provide a specification of the maximum current IMAX of the Bipolar Junction Transistor needed for the specific design.
• To ensure the effective utilization of the DC-IV data in the effective design of the of the power amplifier to effectively maximize the potential.

• To understand the general BJT operation
• To understand the general DC-IV characteristics of the BJT and be able identify the key abilities in the characteristics for the PV system design.
• To effectively understand the variability of the devise parameters of both the semiconductor and the passive parameters and the general effects of the stated variability on the general design of the system.
• To recognize the potential pitfalls and optimize the circuit parameters

The amplifier to be designed has the following design specification

• 100mW powers supply supplied into the load at the frequency of the signal.
• 620Ohms load resistor
• A frequency signal of 465KHz
• The signal drive is 0.707Vrms (2Vpp )
• A 9V power supply
• Class A operation with a linear load value 630Ohms.

The Bipolar junction transistor can be described as a controlled current source; the input current of the transistor controls the output transistor current. For the BJT, the base emitter current is the input (Liu et al., 2019). A design where the output current is controlled by the input and this is achievable through the effective use of an amplifier. The design aspect is where the biasing becomes quite essential as it plays an effective role in ensuring that ta desired out is effectively achieved in the design. The transistor circuit is thus operated in a predetermined operation point. BC107 is utilized in the experimental investigation. The resistors R1 and R2 are utilized in the setting of the biasing currents desired for the operation of the circuit. RE is used in the setting of the bias potential for the VCEQ.

The BJT was effectively simulated through the us eof the circuit configuration, The collector current verses the collector voltage was effectively plotted in order to effectively obtain the output characteristics.

The collector current iCe was then effective plotted against the base current Ibe in order to obtain the transfer characteristics of the circuit.

Since a design criterion is that the PA be made using a 9 V battery/power supply we can use this to Since the design considered was that of the power amplifier, a 9V power supply was used considering no distortion made on the current and the respective voltages. Note, the class A operation considers that all the input signal is allowed in effectively conducting current at the output. This implies that the output signal is neither squashed nor clipped. The respective regions of the output have been effectively defined.

Pload = (9v)^2 /

The green line given in the diagrammatic representation shows the 9V , which is where the 465KHz waveform undergoes effective oscillation. The Vk and VMAX are equidistant from 9V supply and this is very effective in terms of setting out the maximum range of the AC sinusoidal output.

Pload =/ 620= 130.65mW

Vpeak-Peak =16.1V

Vpeak = 8V

Vrms = Vp/

Vrms = 8/

Vrms = 5.66V

Maximum output power = /Zload

We utilized the Rms voltage in conducting the manipulation

=/620

=51.61mW

The peak to peak current is also effectively calculated using the following formulation

Ipeak to peak= Vpeak-peak/ Zload

= 8/620=12.9mA

=0.0129A, This is the value of the peak to peak current as obtained from the experimental investigation.

The experiment was also effectively used in obtaining the values of the operation parameters for the experimental investigation.

The value of ICEQ utilized for the experimental investigation is obtained using the following formulation

=12.9mA/2= 6.45mA

The value of the current gain has also been effectively used in obtain the blue of IBEQ for the specific circuitry utilized for the experimental investigation.

The beta value is obtained using the following formulation

From the data sheet the average current gain is 110

IBEQ= 6.45mA/100=0.00645mA

The following values have been effectively calculated in respect to the respective values of the Common emitter collector and the values obtained from the data sheet which has been used for the experimental investigation. The Kirchhoff law play an instrumental law in drawing an effective analysis of the experimental investigation.

In the experiment, BJT biasing circuit was effectively studied and the respective operation points effectively calculated. The unique characteristics of the BJT come from the BJT interaction between two junctions the emitter and the collector. The graphical representation has been utilized in illustrating how the current varies in respect to the variation of the voltage. One of the other critical aims of the experiment was to effectively obtain the current gain. The experimental experiment was thus very effective in obtaining the gain. The input current is denoted as the ib and the output current as ic, then gain was thus effectively obtained through the consideration of the two current values (Liu et al., 2019). The formulation for the current gain is obtained as ic/ib. The current gain value is non-dependent on the value of the ib since it increases on the same way as the value of the output current ic. The pload values were also effectively calculated through the utilization of the formulation engaged in the analysis section of the experimental report.

Conclusion

By effectively utilizing the ohms law the values of the currents voltages and the diode resistors were effectively measured. The transistor was a very effective component in achieving the current gain desired for the circuitry. The collector current entering the BJT transistor is very effective in terms of effectively deriving the differential amplifier which is necessary for the general operation of the circuit. The experimental investigation was thus very effective in terms of obtaining the current gain and also obtaining then DC-1V characteristics of the BJT. The graphical representation was effectively utilized in deriving the experimental analysis and investigation.

References

Liu, L., Xu, N., Zhang, Y., Zhao, P., Chen, H., & Deng, S. (2019). Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two?Dimensional Atomic Crystals. Advanced Functional Materials, 29(17), 1807893.